Control Components
Switches and other Control Components
LNX's switching capability includes both PIN diode and GaAs MMIC switches with integral drivers. Performance is optimized to cover the .5-26 GHz range, with extended frequency coverage available. Specific diode selection allows LNX to tailor the design to your specific requirements, generally resulting in lower loss and higher isolation performance. One of the key features of LNX switches is the ability to achieve fast switching times, <20 ns, with extremely low switching noise for demanding applications. Switches are available in standard designs as well as custom designs of virtually any configuration.

In addition to RF and microwave switches, LNX also designs and produces PIN based control products including phase shifters, modulators, limiters, and digital and voltage variable attenuators. LNX utilizes advanced FPGA and CPLD devices to linearize our voltage variable attenuators and an active temperature sensing/compensation method to maintain performance over wide temperature ranges.

Switch Matrices
LNX integrates PIN diode and GaAs MMIC switching capabilities into high-quality switch matrices designed to meet your specific requirements. Design capabilities encompass multi-octave, full access N x M configurations for maximum flexibility, and all-switch based matrices for very high port to port isolation. Switching times of <20 ns are readily achievable using the LNX ASIC driver. Integrated amplifiers and equalizers can also be utilized for improved RF performance.

Mechanical configurations include traditional orthogonal mounting of modules (stacked switches and power combiners for example), as well as low package volume, single plane construction with all RF ports mounted in one plane as compared to an orthogonal design. A unique method for high isolation RF crossovers, which does not degrade performance at higher RF frequencies, is used to maintain amplitude balance for broadband multi-throw matrices.

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PRODUCTS
Switch Drivers (PDF)
2 ns Video Switching Time, Low In-Band Noise: -50 dBm at 1 GHz,True Differential Inputs, Compatible with TTL, ECL, and CMOS to 5.0V

.5-18 GHz PIN Diode Transfer Switches (PDF)
Integrated high speed driver controlled by TTL or CMOS signals, Broadband Units, Environmentally Sealed, -55°C to +95°C Operation, Shock/Vibration/Acceleration Capable

.5-18 GHz SP1T PIN Diode Switches (PDF)
Integrated high speed driver controlled by TTL or CMOS signals, Broadband Units, Environmentally Sealed, -55°C to +95°C Operation, Shock/Vibration/Acceleration Capable

.5-18 GHz SP2T PIN Diode Switches (PDF)
Integrated high speed driver controlled by TTL or CMOS signals, Broadband Units, Environmentally Sealed, -55°C to +95°C Operation, Shock/Vibration/Acceleration Capable

.5-18 GHz SP2T Ultra-Fast PIN Diode Switches (PDF)
Integrated high speed driver controlled by TTL signals, Broadband Units, Environmentally Sealed, <20 ns, -55°C to +95°C Operation, Shock/Vibration/Acceleration Capable

.5-18 GHz SP3T PIN Diode Switches (PDF)
Integrated high speed driver controlled by TTL or CMOS signals, Broadband Units, Environmentally Sealed, -55°C to +95°C Operation, Shock/Vibration/Acceleration Capable

.5-18 GHz SP3T Ultra-Fast PIN Diode Switches (PDF)
Integrated high speed driver controlled by TTL signals, Broadband Units, Environmentally Sealed, <20 ns, -55°C to +95°C Operation, Shock/Vibration/Acceleration Capable

.5-18 GHz SP4T PIN Diode Switches (PDF)
Integrated high speed driver controlled by TTL or CMOS signals, Broadband Units, Environmentally Sealed, -55°C to +95°C Operation, Shock/Vibration/Acceleration Capable


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